Page 4 - april_032522.indd
P. 4

TAP TIMES          -4-                                APRIL 2022

                Will GaN compete (from 3)                                                    Metals (conduc-
                                                                                             tors) have a low
                                                                                             bandgap or a
        Theses compound semiconductors (such                                                 bandgap which
        as InP, GaAs, SiC and GaN) fi nd wide ap-                                            overlaps the con-
        plications in high-performance RF/Micro-                                             duction and va-
        wave and optoelectronic devices.                                                     lance bands.

        Superior electronic properties                                                       Wide bandgap
        Their popularity is is due to their superior                                         The term “Wide
        electronic properties including high elec-                                           Bandgap” (WBG)
        tron mobility, high saturated velocity, and                                          semiconductors
        high thermal conductivity and the ability                                            refers to bandgap
        to work at higher breakdown voltages with                                            voltages greater
        low on resistance.                                                                   than ~2eV.

                                                                This is a page  from  U.S.Patent
        This is required for high-effi  ciency power            2,524,035, “Three electrode el-  Ultra-Wide Band-
        converters in Electric Vehicles (EV), and               ement utilizinging  semiconduc-
                                                                tive  materials”  by  Bardeen  and  gap (UWBG) semi-
        Photo Voltaic (PV) Solar array (see Table               Brattain.                    conductors, such
        below).                                                 as high-Al-content AlGaN, diamond,
                                                                β-Ga203, boron nitrides with energy band-
                                                                                    gaps (>4 eV) are the fu-
                                                                                    ture spectrum for higher-
                                                                                    performance RF, TeraHertz
                                                                                    microwave devices and
                                                                                    and other high-power ap-
                                                                                    plications, including those
                                                                                    for extreme environments.


        Wide bandgap, ultra-wide bandgap                                                         Conclusion
        These properties are due to the material’s                                               Over the last
        bandgap. Using a simplifi ed view (right-                                                few years, GaN
        hand column) of solid-state materials with                                               Technology
        valence bands and conduction bands, we                                                   has started to
        can compare the relative bandgap for in-                                                 gain adoption
        sulators, semiconductors and conductors.                                                 and increased
                                                                Solid-state  materials  with valence-  usage in high

        The bandgap is the amount of energy (Eg)                and conduction bands.            frequency- and
        needed to make electrons jump from the                  power applications after lagging SiC semi-
        valence band through the “forbidden band”               conductors’ adoption.
        and enter the conduction band. When this
        occurs, the material becomes more electri-              This was due to the need to overcome
        cally conductive.                                       semiconductor manufacturing process-,
                                                                wafer size and cost restraints. However,
        Insulators, like glass and ceramics, have               we forecast explosive growth over the next
        larger bandgaps on the order of ~6eV,                   few years as the GaN technology matures.
        while semiconductors have a bandgap
        range from ~0.7eV to ~6eV.                                                                   See page 6
   1   2   3   4   5   6   7   8   9